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Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates

Identifieur interne : 000721 ( Main/Repository ); précédent : 000720; suivant : 000722

Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates

Auteurs : RBID : Pascal:13-0201173

Descripteurs français

Pascal (Inist)
- Photoluminescence, Couche mince, Bande interdite, Méthode MOVPE, Epitaxie phase vapeur, Précurseur, Recuit thermique rapide, Luminescence, Propriété optique, Déplacement raie, Intensité excitation, Fluctuation, Etat localisé, Défaut cristallin, Nitrure d'indium, Nitrure de gallium, Arséniure d'indium, Arséniure de gallium, Semiconducteur, Hydrazine(1,2-diméthyl), Hydrazine organique, Carbone, Diffusion(transport), Alliage quaternaire, InGaAsN, Substrat germanium, 7855, 8115K, 7820, 6630.
Wicri :
- concept : Carbone.

English descriptors

KwdEn :
- Carbon, Crystal defects, Diffusion, Energy gap, Excitation intensity, Fluctuations, Gallium arsenides, Gallium nitride, Indium arsenides, Indium nitride, Localized states, Luminescence, MOVPE method, Optical properties, Organic hydrazine, Photoluminescence, Precursor, Quaternary alloys, Rapid thermal annealing, Semiconductor materials, Spectral line shift, Thin films, VPE.

Abstract

The InGaAsN films lattice-matched to Ge substrates and having an about 1 eV bandgap energy have been grown on Ge(001) vicinal substrates by metal organic vapor phase epitaxy (MOVPE) varying the group-V precursor flow rates, and their photoluminescence (PL) properties have been investigated. Rapid thermal annealing (RTA) with suitable conditions has improved the luminescence properties. The PL spectral shifts with temperature and excitation intensity indicate that a larger flow of the group-V precursors enhances the carrier localization due to the potential fluctuations caused by the compositional non-uniformity and other localized states which originate from impurities or crystal defects. The huge amount of 1, 1-dimethylhydrazine (DMHy), which can efficiently incorporate N, may also introduce a significant amount of carbon species which can act as impurities, or may suppress the surface migration of the group-III atoms resulting in compositional non-uniformity and crystal defects.

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Pascal:13-0201173

Le document en format XML

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<author><name sortKey="Uesugi, K" uniqKey="Uesugi K">K. Uesugi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Advanced Materials Science, The University of Tokyo</s1>
<s2>5-1-5 Kashiwanoha 277-8561</s2>
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<sZ>1 aut.</sZ>
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<wicri:noRegion>5-1-5 Kashiwanoha 277-8561</wicri:noRegion>
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<author><name sortKey="Kuboya, S" uniqKey="Kuboya S">S. Kuboya</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Advanced Materials Science, The University of Tokyo</s1>
<s2>5-1-5 Kashiwanoha 277-8561</s2>
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<sZ>1 aut.</sZ>
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</author>
<author><name sortKey="Sanorpim, S" uniqKey="Sanorpim S">S. Sanorpim</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Chulalongkorn University, Phayathai Rd</s1>
<s2>Phathumwan, Bangkok 10330</s2>
<s3>THA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Phathumwan, Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Onabe, K" uniqKey="Onabe K">K. Onabe</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Advanced Materials Science, The University of Tokyo</s1>
<s2>5-1-5 Kashiwanoha 277-8561</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<date when="2013">2013</date>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carbon</term>
<term>Crystal defects</term>
<term>Diffusion</term>
<term>Energy gap</term>
<term>Excitation intensity</term>
<term>Fluctuations</term>
<term>Gallium arsenides</term>
<term>Gallium nitride</term>
<term>Indium arsenides</term>
<term>Indium nitride</term>
<term>Localized states</term>
<term>Luminescence</term>
<term>MOVPE method</term>
<term>Optical properties</term>
<term>Organic hydrazine</term>
<term>Photoluminescence</term>
<term>Precursor</term>
<term>Quaternary alloys</term>
<term>Rapid thermal annealing</term>
<term>Semiconductor materials</term>
<term>Spectral line shift</term>
<term>Thin films</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Couche mince</term>
<term>Bande interdite</term>
<term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Précurseur</term>
<term>Recuit thermique rapide</term>
<term>Luminescence</term>
<term>Propriété optique</term>
<term>Déplacement raie</term>
<term>Intensité excitation</term>
<term>Fluctuation</term>
<term>Etat localisé</term>
<term>Défaut cristallin</term>
<term>Nitrure d'indium</term>
<term>Nitrure de gallium</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Semiconducteur</term>
<term>Hydrazine(1,2-diméthyl)</term>
<term>Hydrazine organique</term>
<term>Carbone</term>
<term>Diffusion(transport)</term>
<term>Alliage quaternaire</term>
<term>InGaAsN</term>
<term>Substrat germanium</term>
<term>7855</term>
<term>8115K</term>
<term>7820</term>
<term>6630</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Carbone</term>
</keywords>
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<front><div type="abstract" xml:lang="en">The InGaAsN films lattice-matched to Ge substrates and having an about 1 eV bandgap energy have been grown on Ge(001) vicinal substrates by metal organic vapor phase epitaxy (MOVPE) varying the group-V precursor flow rates, and their photoluminescence (PL) properties have been investigated. Rapid thermal annealing (RTA) with suitable conditions has improved the luminescence properties. The PL spectral shifts with temperature and excitation intensity indicate that a larger flow of the group-V precursors enhances the carrier localization due to the potential fluctuations caused by the compositional non-uniformity and other localized states which originate from impurities or crystal defects. The huge amount of 1, 1-dimethylhydrazine (DMHy), which can efficiently incorporate N, may also introduce a significant amount of carbon species which can act as impurities, or may suppress the surface migration of the group-III atoms resulting in compositional non-uniformity and crystal defects.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates</s1>
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<s9>ed.</s9>
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<s9>ed.</s9>
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<s9>ed.</s9>
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<fA14 i1="01"><s1>Department of Advanced Materials Science, The University of Tokyo</s1>
<s2>5-1-5 Kashiwanoha 277-8561</s2>
<s3>JPN</s3>
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<sZ>2 aut.</sZ>
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<fA14 i1="02"><s1>Department of Physics, Chulalongkorn University, Phayathai Rd</s1>
<s2>Phathumwan, Bangkok 10330</s2>
<s3>THA</s3>
<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>The InGaAsN films lattice-matched to Ge substrates and having an about 1 eV bandgap energy have been grown on Ge(001) vicinal substrates by metal organic vapor phase epitaxy (MOVPE) varying the group-V precursor flow rates, and their photoluminescence (PL) properties have been investigated. Rapid thermal annealing (RTA) with suitable conditions has improved the luminescence properties. The PL spectral shifts with temperature and excitation intensity indicate that a larger flow of the group-V precursors enhances the carrier localization due to the potential fluctuations caused by the compositional non-uniformity and other localized states which originate from impurities or crystal defects. The huge amount of 1, 1-dimethylhydrazine (DMHy), which can efficiently incorporate N, may also introduce a significant amount of carbon species which can act as impurities, or may suppress the surface migration of the group-III atoms resulting in compositional non-uniformity and crystal defects.</s0>
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<s5>01</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>02</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0>
<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="ENG"><s0>MOVPE method</s0>
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<fC03 i1="04" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0>
<s5>05</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>VPE</s0>
<s5>05</s5>
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<s5>06</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>16</s5>
</fC03>
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<s2>NK</s2>
<s5>17</s5>
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<s2>NK</s2>
<s5>17</s5>
</fC03>
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<s2>NK</s2>
<s5>18</s5>
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<s5>19</s5>
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<s2>NK</s2>
<s2>FX</s2>
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<s5>30</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s2>NC</s2>
<s5>31</s5>
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<s2>NC</s2>
<s5>31</s5>
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<s5>32</s5>
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<s5>32</s5>
</fC03>
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<s5>33</s5>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Quaternary alloys</s0>
<s5>33</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>InGaAsN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>Substrat germanium</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>7855</s0>
<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
</fC03>
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<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>6630</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>182</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICMOVPE-XVI International Conference on Metalorganic Vapor Phase Epitaxy</s1>
<s2>16</s2>
<s3>Busan KOR</s3>
<s4>2012-05-20</s4>
</fA30>
</pR>
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Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates

Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates

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